Abstract

Several shock-tube experiments were performed to study the oxidation of argon- diluted SiH4/O2 mixtures behind reflected shock waves for temperatures between 1080 and 1780 K at pressures near 1 atm. Reaction progress was monitored using infrared emission from SiH4, FM absorption of SiH2, and chemiluminescence from OH*. Because of the difficulty in making premixed mixtures of silane and oxygen, these experiments produced the first shock- tube data on silane oxidation without the presence of another oxidizing species such as H2. A set of reactions was employed to model the OH* time history, and a reaction involving SiH + O2 was required to reproduce the OH* behavior. When compared to an existing chemical kinetics model of high-temperature silane oxidation, the agreement between data and model for the SiH2 and SiH4 measurements is not good, indicating some improvement in the mechanism is needed.

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