Abstract
Abstract In this work, Si implantation and activation for lowering the ohmic contact resistance (Rc) of mm-wave GaN HEMTs has been investigated. Various combinations of annealing temperature/duration and implantation doses were tested. Dopant activation was performed using a modified procedure in an MOCVD tool, involving fast temperature ramping and annealing the samples for 8 minutes at 1150 °C. Thereby, ~ 0.02 ± 0.01 Ω·mm contact resistance was achieved on a fully doped region and ~ 0.1 ± 0.02 Ω·mm when only the source and drain contact region was n-type doped. For comparison, a well-established alloyed Ti/Al/Ni/Au ohmic contact scheme without implantation, was used as reference resulting in an average Rc ~ 0.34 ± 0.12 Ω·mm on the same wafer. Besides the three times lowered contact resistance the implanted contacts also showed a significantly improved on-wafer homogeneity.
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