Abstract
We have deposited hydrogenated silicon suboxides (SiO r:H, for r between 0 and 2) by Remote PECVD under conditions in which H is bonded predominantly in monohydride (SiH) configurations. The shape and position of the infrared (ir) absorption band due to the SiH stretching vibration is studied as a function of r. The band shape is synthesized using an expanded version of the chemical induction model which includes both local and remote (network) effects.
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