Abstract
In this paper, x mol% Mn-doped SrTiO3 (STMx, x = 0, 0.5, 1, 3 and 5) thin films were synthesized by a sol-gel method. The effect of Mn doping on the microstructure and electrical performance was investigated. STMx (x ≤ 1) thin films shows a single cubic perovskite phase while impurity phase appears for STM3 and STM5 thin films confirmed by X-ray diffraction. X-ray photoelectron spectra reveals that STM1 thin film has the lowest concentration of oxygen vacancy. The dielectric constant and loss of STMx (x ≤ 1) films display good frequency stability, while decrease with the frequency for STM3 and STM5 thin films. And all samples display excellent bias stability of dielectric constant; this is advantageous for applications in a high electric field. The ferroelectric test demonstrates that the electrical breakdown strength increases and leakage current decreases for Mn doped SrTiO3 films. A great recoverable energy storage density of 23.8 J/cm3 with an efficiency of 69.8% at 2.286 MV/cm is obtained in STM1 thin film. Furthermore, STM1 thin film shows good frequency stability of energy storage properties. It indicates that Mn doping is a simple and effective method to improve the energy storage properties of dielectric capacitors.
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