Abstract
We reported the effects of Mn doping on the structure and dielectric properties of (Ba0.835Ca0.165)(Zr0.09Ti0.91)O3 (BCZT) thin films prepared by sol–gel method. The (Ba0.835Ca0.165)Mnx(Zr0.09Ti0.91)1−xO3 (x=0, 0.002, 0.005, and 0.01) thin films exhibited a pure pseudo-cubic perovskite structure with random orientation. Scanning electron microscopy and atomic force microscopy observation showed that increasing Mn-doping amount caused a decrease in particle size and a cluster of the particles, while the film surface remained smooth and crack-free. Compared with the undoped film, Mn doped BCZT thin films exhibited smaller dielectric constant and lower dielectric loss. The figure of merit reached the maximum value of 16.7 with a tunability of 53.6% for the film with 0.5mol% Mn doping, when a bias electric field of 400kV/cm was applied at 100kHz. The results indicated that the Mn doped BCZT thin films are suitable for tunable microwave device applications.
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