Abstract
An indium post-treatment of the InGaN epilayers was employed for InGaN-to-GaN interface modification. We find that the treatment could lead to selective etching of the InGaN epilayers around threading dislocations (TDs) due to preferential etching of the chemically active step-correlated TDs and formation of indium-rich InGaN nanostructures on the smooth InGaN surface. The intentionally formed V-shaped pits by site-selective etching of the InGaN epilayers resulted in an increased surface potential barrier at the pit sidewalls due to the relatively thin InGaN single quantum well. The increased energy bandgap of the InGaN active layers around the TDs cores caused the lateral carrier confinement away from nonradiative recombination at the defects and thus significantly enhanced the light emission efficiency.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
