Abstract
The relationship of the threading dislocations (TDs) and InGaN-based quantum well (QW) optical characteristics is studied by temperature-dependent photoluminescence, high-resolution X-ray diffraction and atomic force microscopic. It is found that TDs deteriorate the QW interfacial abruptness, and can enhance the localization effect. Temperature-dependent photoluminescence measurements give evidence that the TDs act as nonradiative recombination (NR) centers in InGaN active layer. According to these results, it is inferred that the influence of TD on the optical properties of InGaN-based QW depends on the competition of localization induced by TDs and the NR effect of TDs.
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