Abstract
AbstractA key challenge currently for the new ferroelectric refrigeration with high efficiency and environmental friendliness lies in the urgent demand for ferroelectric materials with huge electrocaloric effects (ECE). Ferroelectric polycrystalline ceramics with high ECE stand out as one of the most promising candidates for electrocaloric cooling applications. However, the grain boundary network, as a barrier for the cross‐transmission of charged carriers, widely exists in electrocaloric polycrystalline ceramics and is often neglected in favor of focusing more on composition regulation and structural design. Herein, a grain boundary barrier engineering is proposed that regulates the Schottky barrier at the grain boundary network in the Ba0.8Zr0.2TiO3 ceramics by a maneuverable annealing process and clarifies its critical role in enhancing the ECE of polycrystalline ceramics. As a result, a substantial enhancement of the EC performance (from 0.68 to 1.63 K at 50 °C and 80 kV cm−1, ≈2.4 times) has been achieved in the annealed Ba0.8Zr0.2TiO3 ceramics with a lower Schottky barrier. The microstructural and electrical characterization reveals that the lower Schottky barrier in the grain boundary network facilitates the domain switching and electronic transition, hence resulting in enhanced polarization response and EC performance.
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