Abstract
Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have been produced by several vendors for commercial applications. SiC-MOSFET reliability was assessed using bias-temperature instability (BTI) and time-dependent dielectric breakdown (TDDB) characteristics. Here, we compared two planar SiC-MOSFET samples (A and B) from different vendors. The samples exhibited significantly different positive and negative BTI, time-dependent gate-current, TDDB lifetime statistics, and temperature dependence. These differences suggest NO (nitric oxide)-annealing variations.
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