Abstract
In this paper, a superior-quality InN/p-GaN interface grown using pulsed metalorganic vapor-phase epitaxy (MOVPE) is demonstrated. The InN/p-GaN heterojunction interface based on high-quality InN (electron concentration 5.19 × 1018 cm−3 and mobility 980 cm2/(V s)) showed good rectifying behavior. The heterojunction depletion region width was estimated to be 22.8 nm and showed the ability for charge carrier extraction without external electrical field (unbiased). Under reverse bias, the external quantum efficiency (EQE) in the blue spectral region (300–550 nm) can be enhanced significantly and exceeds unity. Avalanche and carrier multiplication phenomena were used to interpret the exclusive photoelectric features of the InN/p-GaN heterojunction behavior.
Highlights
Single-nitride solar cells possess key and important features that can facilitate their large-scale application, whereby the nontoxicity of the primary elements offers opportunities towards future “green” technologies
We demonstrate high-quality indium nitride (InN) films with low defect concentration and limited-roughness interface with magnesium-doped p-GaN, both grown by pulsed metalorganic vapor-phase epitaxy (MOVPE)
The X-ray diffraction (XRD) 2-theta scan measurements of the InN/p-GaN structure (Figure 1a) revealed a pronounced peak at 31.46◦ corresponding to the diffraction of hexagonal InN (0002); compared to the relaxed InN (0002) [27,28,29], our measurements show our InN layer slightly strained
Summary
Single-nitride solar cells possess key and important features that can facilitate their large-scale application, whereby the nontoxicity of the primary elements offers opportunities towards future “green” technologies. The light nitrogen anions beside the heavy indium cations result in a phonon dispersion between high-lying optical phonon energies and low-lying acoustic phonon energies. Such a large gap [3] can effectively block Klemens decay [4,5]. Hot carrier absorbers are expected to reduce significant thermal losses by directly extracting the hot carriers [6,7]. Their population is maintained inside the absorber by inhibiting the inherently ultrafast cooling process [6]
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
