Abstract
Metalorganic vapor phase epitaxy (MOVPE) of GaAs is analyzed using a new growth model. Surface reactions for trimethylgallium or triethylgallium adsorbed on the substrate surfaces are assumed to be the growth-rate-limiting steps. A catalytic effect is taken into account by assuming different decomposition rates for adsorbed alkyls on Ga- and As-terminated surfaces. The surface reactions are expressed in terms of reaction times and analyzed using a rate equation approach. Parameters in a rate equation are determined by fitting to the experimental results obtained by various methods: conventional MOVPE with and without laser irradiation, pulsed MOVPE, and laser atomic layer epitaxy. Good agreement between experiments and calculations in all growth methods shows the usefulness of the model.
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