Abstract
Photoluminescence spectra of undoped GaAs grown by metalorganic vapor phase epitaxy with Ar+ laser irradiation were measured at 1.8 K. The enhancement of the incorporation of the carbon acceptor and the increase of the luminescence intensity were recognized as laser irradiation effects. These experimental results suggest that the surface reaction between the radicals involving the Ga atom and the photoinduced carrier at the substrate surface is enhanced by the laser irradiation.
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