Abstract
The rapid thermal annealing/sulfurization process has been widely used for the fabrication of absorber films in the two-stage process, which can simplify the thin film fabrication process. In the present investigation, Cu2SnS3 (CTS) thin films were deposited by the two-stage process which involved sputtering and rapid thermal annealing process (RTP). The CTS thin films were deposited at different ramp rates from 10 °C/min - 50 °C/min and the sulfurization temperature of 520 °C. The XRD results confirmed the dominant monoclinic CTS phase with high crystalline quality. The Raman analysis of the sulfurized films exhibited the Raman modes at 295 cm−1 and 354 cm−1, and these modes confirmed the monoclinic phase of CTS. All the M-CTS films showed Cu/Sn ratio (Cu-poor) close to stoichiometric composition and exhibited compact morphology with good grain size. The optical bandgap values and absorption coefficient of M-CTS films were found to be around 0.93 eV–0.95 eV and >104 cm−1, respectively.
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