Signal Integrity Design and Analysis of 3-D X-Point Memory Considering Crosstalk and IR Drop for Higher Performance Computing

Abstract

In this article, we, for the first time, used signal integrity (SI) to design and analyze 3-D X-Point memory, including a phase-change memory (PCM) cell, ovonic threshold switch (OTS) selector, interconnection lines, and peripheral circuits. With the narrow space and the long interconnection lines that come with 20-nm process technology, crosstalk and IR drop can degrade the voltage margin of the memory cell and affect the memory operation. For SI analysis considering crosstalk and IR drop, the unit size of the memory array tile was considered in designing the interconnection lines. Crosstalk and IR drop are analyzed using full 3-D electromagnetic and circuit simulations. To cover practical conditions, the PCM cell and OTS selector are modeled as behavior models using Verilog-A modules, respectively. Also, the word lines (WLs) and bit lines (BLs) of 3-D X-Point memory are modeled to resistance and capacitance by ANSYS Q3D extractor. The core peripheral circuits, such as decoder, sense amplifier, and analog-to-digital converter, are included in the circuit simulation. To verify the proposed design and analysis, a transient simulation was conducted considering crosstalk and IR drop of 3-D X-Point memory. A tradeoff relationship between crosstalk and IR drop in the interconnection designs was verified. Additionally, to suppress crosstalk and reduce IR drop, the new design of the interconnection lines considering the tradeoff between SI issues is proposed. The newly proposed interconnection design shows 30% improvement in the voltage margin considering the IR drop issues and under 10% enhancement of crosstalk noise. It is expected that the SI analysis and design methodologies could be widely applied in other new memory developments.