Abstract
Recently, metal-oxide thin-film transistor (TFT)-based flat-panelx-ray detectors have attracted attention owing to their fast readouttimes and low noise characteristics. We empirically analyzed the signaland noise characteristics of an indium gallium zinc oxide (IGZO) TFT-baseddetector in comparison with those of a conventional hydrogenated amorphoussilicon (a-Si:H) TFT-based detector. We compared the large-areasignal transfer functions of the detectors as a function of air kermaat their entrance surfaces. Signal and noise performances were evaluatedby measuring the modulation-transfer function, noise-power spectrum,and detective quantum efficiency (DQE). The low-dose imaging capabilityof the detectors was assessed by investigating the large-area or zero-frequencyDQE as a function of air kerma. Herein, we evaluated the value ofthe IGZO detector in terms of dose efficiency in comparison to theconventional a-Si:H detector.
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