SiGeSn buffer layer for the growth of GeSn films

Abstract

Inclusion of Si atoms to the growth surface during the molecular beam epitaxy of Ge and Sn to form a SiGeSn alloy was identified as a reactive surface species and as a means to compensate strain, which allowed for the subsequent growth of GeSn alloys with high Sn content. The development of a SiGeSn virtual substrate having a 15% Sn concentration and lattice parameter larger than 5.72 Å is demonstrated, using atomic force microscopy, x-ray reciprocal space mapping, and transmission electron microscopy, as a method for the direct growth of thick (>500 nm) fully relaxed GeSn alloys with greater than 10% Sn. This buffer layer enables the monolithic integration of GeSn with silicon for optoelectronic applications, as the SiGeSn virtual substrate allows for selective chemical etching of GeSn, which is important for device fabrication.