Abstract
In this work different SiGe-BiCMOS based technology platforms for mm-wave and radar applications are presented. Based on the evolution of IHP BiCMOS technologies the performance improvement for SiGe-heterojunction bipolar transistor (HBT) in the past decades in comparison to scaled RF-CMOS technologies is shown. We depict that an increase of the processing effort of only 35% deliver a SiGe-HBT device performance improvement of >170% compared to IHPs first high-speed HBT generation. Moreover the co-integration of new modules with the SiGe-BiCMOS baseline technology is reviewed. The monolithic integration of an additional RF-MEMS switch module is shown and we discuss different packaging approaches for the integrated device. Furthermore a SiGe-BiCMOS/InP-bipolar heterogeneous integration platform is presented. All shown technologies had proven their usefulness for radar applications and different examples from F-band up to the 240 GHz range are reviewed.
Published Version
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