Abstract
ABSTRACTA gas sensor micro-device using both thermoelectric film and catalyst film has been developed on the platform of micro-hotplate. Thermoelectric thin film of B-doped SiGe was deposited on the Si3N4/SiO2/Si substrate by helicon sputtering method and thermal annealing was carried out to crystallize the as-deposited amorphous-like film. With increasing the annealing temperature and time, the crystallization of the SiGe thin film progressed, resulting in high carrier mobility and large absolute value of Seebeck coefficient. The hydrogen sensitivity of the micro-thermoelectric gas sensors was investigated.
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