Abstract
In this paper, the p-type Si/SiGe metal-oxide-semiconductor field-effect transistor (PMOSFET) utilizing a strain-graded-Si 1− x Ge x well, has been successfully fabricated by ultra-high-vacuum chemical vapor deposition (UHVCVD). Due to the inverse grading Ge composition in conjunction with higher valence-band discontinuity at Si 0.7Ge 0.3/Si-buffer interface, most of carriers are populated at the bottom of SiGe-conducting channel, which undergo higher mobility. It is found that by grading Ge fraction in the channel, the devices exhibit the excellent property not only of higher mobility but also enhancement in extrinsic transconductance and linear operation range over a wider dynamic range than those of devices with uniform Ge profile for the same integrated Ge dose in SiGe conducting well.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
