Abstract
Improvements in high-speed performance, impurity-profile engineering, and technology trends in SiGe HBTs and BiCMOS devices are briefly reviewed. Advances in self-aligned SiGe HBT structures associated with a thin base have significantly raised cutoff frequency f/sub T/ and maximum oscillation frequency f/sub max/ to more than 200 GHz. Impurity-profile engineering has enhanced operating speed and has improved characteristic controllability. In addition, a scaled-down emitter has provided both high-speed and low-power performance. In regards to SiGe BiCMOS technology, scaling of CMOS gate length is continuing rapidly in response to the need for sophisticated functions in communication LSIs. Accordingly, integration process schemes and technologies for embedding scaled CMOS with high-speed SiGe HBTs are being developed.
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