Abstract
A process for realisation of SiGe Esaki diodes in layers grown by ultra-high vacuum chemical vapour deposition has been developed and the first Esaki diodes are reported for this growth method. Intrinsic SiGe-layers are grown on highly boron-doped p+-Si layers, while post-growth proximity rapid thermal diffusion of phosphorous into the SiGe is employed to form an n+-layer. Tunnel diodes with a depletion layer width of about 6 nm have been realised in Si0.74Ge0.26, showing a peak current density of 0.18 kA/cm2 and a current peak-to-valley ratio of 2.6 at room temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
