Abstract
The authors present high-quality p-type SiGe double barrier resonant tunneling diodes obtained from bulk SiGe substrates grown by the multicomponent zone-melting method and by the layer deposition with molecular beam epitaxy. Devices exhibit a high peak-to-valley current ratio up to 8.8 at 4.2K and a negative differential resistance up to 340K. The result demonstrates that bulk SiGe substrates have a clear potential impact for fabricating high-performance SiGe heterostructure devices based on quantum transport.
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