Abstract
Sidewall protection by nitrogen and oxygen in poly-Si 1− x Ge x anisotropic etching has been investigated using electron–cyclotron resonance (ECR) chlorine plasma. It was found that the sidewall protection with only N 2 addition is weaker than that of poly-Si. Highly anisotropic etching of poly-Si 0.5Ge 0.5 is achieved by the addition of both N 2 and O 2. In the investigation of X-ray photoelectron spectroscopy (XPS) for poly-Si 0.5Ge 0.5 after the radical dominant etching, it was found that the sidewall protective layer is scarcely formed on Ge surface by not only N 2 addition but also by O 2 addition. From these results, it is suggested that highly anisotropic etching of poly Si 0.5Ge 0.5 is achieved by the etching protection of both N and O on the sidewall against chlorine radical etching.
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