Abstract
ABSTRACTMolybdenum disulfide (MoS2), one of the transition-metal dichalcogenides, is a 2-dimensional semiconducting material that has a layered structure. Owing to excellent optical and electronic properties, the ultra-thin MoS2 film is expected to be used for various devices, such as transistors and flexible displays. In this study, we investigated the physical and chemical properties of sputtered-MoS2 film in the sub-10-nm region by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). As the results of Raman spectroscopy investigations, we observed two Raman modes, E12g and A1g, in the 2-dimensional MoS2 films. As the thickness of the MoS2 film decreased, the peak frequency difference between E12g and A1g modes increased. From the XPS investigations, we confirmed sulfur reductions from the 2-dimensional MoS2 films. Therefore, we considered that the sulfur vacancies in the MoS2 film affected the Raman peak positions. Moreover, we performed the additional sulfurization of sputtered-MoS2 films. From the XPS and Raman investigations, the quality of the sputtered-MoS2 films was improved by the additional sulfurization.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
