Abstract
A thermistor using an r.f.-sputtered SiC film has been developed as a temperature-sensing device. The resistance of the SiC film has a unique temperature dependence in that the constant B increases linearly with increasing temperature. Thus the following experimental equation representing the temperature dependence of the resistance R is obtained: R = AT −n exp( m T ) where A, n and m are experimental constants and T is the absolute temperature. The temperature dependence of the resistance can be obtained with good reproducibility by controlling the substrate temperature and adding a small amount of nitrogen gas to the argon sputtering atmosphere. The thermistor has the advantage of being able to detect temperature with (1) high accuracy over a wide range, (2) rapid response by brazing a thermistor element to a metal housing and (3) good stability for long periods under severe conditions.
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