SiC power DIMOS with double implanted Al/B P-well

Abstract

Power 6H- and 4H-SiC DIMOS test structures have been fabricated using a new technology. P-well formation was optimised from simulation study and previous experiments on high-energy Al implantation. Reduction of Al presence at interface and reduced defect formation during implantation were the main objectives of this optimisation. Complementary surface implantation of boron was performed to adjust the interface (channel) doping. Power DIMOS were characterised at ambient temperature and up to 320°C. 4H-SiC DIMOS exhibits very poor characteristics while 6H-SiC device functionality is maintained at 300°C. Power DIMOS without complementary boron implantation also exhibits good performances up to 300°C.