SiC islands grown on Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C 60 precursor

Abstract

We have investigated the formation processes and characteristics of SiC islands grown on the Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C 60 precursor using high resolution electron energy loss spectroscopy (HREELS). The SiC islands are prepared by heating the C 60 adsorbed Si surfaces and confirmed by the observation of the optical surface phonon, Fucks-Kliewer mode. We found that SiC islands are formed at 1170 K and 1120 K on the Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces, respectively. We attribute the difference in the formation temperature to the different amount of charge which is transferred from Si surface to C 60 molecule at 500 K. The difference in the scattering cross-section of the Fucks-Kliewer mode indicates the different shape of SiC islands on each surface.