Abstract
Abstract The study presented here investigates the possibility of using high resolution electron energy loss spectroscopy (HREELS) as characterization tool for III-V semiconductor layers grown by the molecular beam epitaxy (MBE) technique in the same ultra high vacuum (UHV) analysis system. Preliminary experiments are reported on undoped GaAs and AlAs layers grown on GaAs(100) substrates. Characteristic surface phonons of GaAs and in particular of AlAs are observed by HREELS and used to describe the infrared dielectric response of the semiconductors in the framework of the dielectric function theory. Other relevant information obtained by HREELS on the layer structure is discussed.
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