Abstract
SiC bulk material quality and surface preparation do not satisfy all the requirements for direct device production. It is necessary to have high quality thick epitaxial layers with low background doping concentration for the fabrication of SiC high power, high voltage, high frequency devices. Different aspects of SiC homo- and heteroepitaxial growth are discussed in this chapter. The wafer surface has a large impact on epitaxial layers, heterostructures and finally on device properties. Thus wafer processing before epitaxial growth is discussed in detail.
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