Abstract
A novel Silicon-Carbide heterojunction U-MOSFET embedded a P-type pillar buried in the drift layer (BP-TMOS) is proposed and simulated in this study. When functioning in the on state, the merged heterojunction structure will control the parasitic body diode, and the switching loss will decrease. Moreover, to lighten the electric field on the gate oxide corner, a high-doped L-shaped P+ layer near the heterojunction beneath the gate oxide was introduced; thus, the gate oxide reliability improved. A p-type pillar is introduced in the drift layer. The p-type pillar can assistant the drift layer to deplete. Thus, the specific on-resistance for BP-TMOS can be reduced with an increase in the N-drift region’s doping concentration. Compared to the traditional SiC MOSFET (C-TMOS), the specific on-resistance decreased by 20.4%, and the breakdown voltage increased by 53.7% for BP-TMOS, respectively. Meanwhile the device exhibits a 55% decrease and a 69.7% decrease for the switching loss and gate to drain charge.
Highlights
IntroductionThe wide band-gap material has become a new research topic in the power devices
MOSFET with a Buried P-Type PillarOver the years, the wide band-gap material has become a new research topic in the power devices
To avoid the aged deterioration effect, when the SiC MOSFET is used in the power system, usually paralleled with a Schottky barrier diode (SBD) [4,5,6,7], it may cause more energy dissipation and undesirable stray inductances
Summary
The wide band-gap material has become a new research topic in the power devices. To avoid the aged deterioration effect, when the SiC MOSFET is used in the power system, usually paralleled with a Schottky barrier diode (SBD) [4,5,6,7], it may cause more energy dissipation and undesirable stray inductances. In order to obtain the optimised the reverse recovery performance and reduce switching loss, several papers have proposed several structures, for example, using a SBD paralleled with the SiC trench MOSFET [8,9,10,11,12]. In addition to the optimised reverse recovery performance and the reduced the switching loss from the Heterojunction diode (HJD) in the drift region, the assist depletion effect from the P-pillar can bring a better balance among the specific on-resistance (Ron,sp ) and the breakdown voltage (BV).
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