Abstract
SiC Schottky detectors, having a superficial active zone up to 80 micron depths and a thin surface metallization, are adapt to detect high energetic ions. In order to demonstrate their detection ability with high-energy resolution, a helium Rutherford backscattering spectroscopy (RBS) was employed to evaluate their detection efficiency, energy resolution in the region 1.0 – 6.0 MeV alpha ions, depth resolution and dependence on the ion beam current. The detector parameters dependencies on the surface passivation layers, ion energy and current are presented. The comparison of RBS analysis using a traditional barrier silicon detector is investigated, and the differences with SiC detector is presented and discussed.
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