SiC 세라믹스 탄성률의 온도 의존성

Abstract

In this paper, we employed the classical molecular dynamics simulations using Tersoff’s potential to calculate the elastic constants of the silicon carbide (SiC) crystal at high temperature. The elastic constants of the SiC crystal were calculated based on the stressstrain characteristics, which were drawn by the simulation using LAMMPS software. At the same time, the elastic constants of the SiC ceramics were measured at different temperatures by impulse excitation testing (IET) method. Based on the simulated stress-strain results, the SiC crystal showed the elastic deformation characteristics at the low temperature region, while a slight plastic deformation behavior was observed at high strain over 1,000℃ temperature. The elastic constants of the SiC crystal were changed from about 475 ㎬ to 425 ㎬ by increasing the temperature from RT to 1,250℃. When compared to the experimental values of the SiC ceramics, the simulation results, which are unable to obtain by experiments, are found to be very useful to predict the stress-strain behaviors and the elastic constant of the ceramics at high temperature.