SiBCN synthesis by high-dose N++C++BF2+ ion implantation

Abstract

High-dose implantation processes of N++C++BF2+ have been performed on Si(100) substrates at 600 °C. Additional simple (N+,C+) and double (N++C+ and N++BF2+) implantations have also been produced to sequentially study the synthesis of different semiconductor compounds. FTIR spectra of all the samples before and after thermal annealing at 1200 °C have been acquired. When N+ and C+ are co-implanted the formation of a ternary phase of SiCN nature is suggested, meanwhile in the case of N+ and BF2+ competition between BN and Si3N4 takes place. The sequential implantation of the three species produces a stable surface region as deduced from the AES profiles. IR and XPS measurements suggest the formation of a SiCBxNy mainly formed by SiC with a significant content of B and N (∼20%).