Si-based nanoscale SiO 2 islands and light-emitting source array

Abstract

A SiO2 nanoscale island array was fabricated on a Si substrate by using anodic porous alumina as a mask. Transmission electron microscopy observation and the atomic force microscopy pattern show that the arrangement of SiO2 islands has a quasi-hexagonal symmetry. Ge ions with a dose of 1×1017 cm-2 were subsequently implanted into the SiO2 island array to form Ge-related light-emitting centers. The photoluminescence (PL) spectra of as-implanted and annealed samples show three PL bands at 370, 400 and 415 nm. Their intensities reach maximums in the sample with an annealing temperature of 700 °C. Spectral analysis suggests that the 370 and 415 nm PL bands arise from ≡Ge-Ge≡ and ≡Ge-Si defect centers, while the 400 nm PL is related to GeO color centers in the SiO2 islands. The existence of these PL bands indicates the formation of a Si-based nanoscale light source array.