Abstract
It has been observed for the first time that interface states of Si metal-oxide-semiconductor diode are enhanced by the influence of oxidation-induced stacking faults (OSF). The observation has been carried out by isothermal capacitance transient spectroscopy measurement, using two kinds of samples. The samples are cut from the same CZ-Si wafer with ‘‘ring OSF.’’ One is prepared from the region with ‘‘ring OSF’’ and the other is prepared from the defect-free region.
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