Abstract
In situ hydrogen cleaning to reduce the surface segregation of n-type dopants in SiGe epitaxy has been used to fabricate Si∕SiGe resonant tunneling diodes in a joint gas source chemical vapor deposition and molecular beam epitaxial system. Diodes fabricated without the in situ clean demonstrate linear current-voltage characteristics, while a 15min hydrogen clean produces negative differential resistance with peak-to-valley current ratios up to 2.2 and peak current densities of 5.0A∕cm2 at 30K. Analysis of the valley current and the band structure of the devices suggest methods for increasing the operating temperature of Si∕SiGe resonant tunneling diodes as required for applications.
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