Si ∕ Si Ge -based edge-coupled photodiode with partially p-doped photoabsorption layer for high responsivity and high-power performance

Abstract

We demonstrate a Si∕SiG-based edge-coupled photodiode that can achieve high-speed, high output power, and high responsivity performance at a wavelength of 830nm for application to short-reach fiber communication. We incorporate a p-type-doped Si∕Si0.5Ge0.5-based superlattice with a Si-based depletion layer to enhance the photoabsorption process and minimize the hole-trapping problem of the Si∕SiGe multiple quantum well. An extremely high bandwidth-efficiency product performance (10GHz, 276%, 27.6GHz) and high peak output voltage (1.5V) have been achieved simultaneously by operating this device in the avalanche regime.