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Abstract
We present a novel Schottky contact photodetector (PD) based on internal photoemission effect (IPE) comprising of a straight air-slot-waveguide (WG) and a metal/silicide stripe buried in a p-type Si microring resonator (MRR) for optical communication. Several metal/silicides are considered for the stripe (PtSi, Pd2Si, TaSi2, and Ag). This PD benefits from the essential features of slot-WGs, MRR-based PDs, and double Schottky barrier (DSB) PDs. For a TaSi2 PD using DSB S-WG-MRR with high Schottky barrier feature, numerical simulation predicts the responsivity of $\sim 0.22$ A/W, a bandwidth-efficiency product of $\sim 10.5$ GHz, and a dark current of 30 pA at room temperature. These characteristics are significantly improved in comparison with those reported for MRR-IPE-PDs.
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