Si nanocluster growth using a digital gas-feeding method in the LPCVD system and its charge storage effect

Abstract

The density and size of Si nanoclusters were controlled by using a newly suggested digital gas-feeding method with Si 2H 6 source gas in a low pressure chemical vapor deposition system. The density of the Si nanoclusters increased and the size slightly changed based on the frequency of gas pulse feeding in the digital process. A new process was used in the fabrication of the Si nanocluster floating gate memory structures, which allowed the maximum program window of 6 V to be achieved. It was also found that the program window could be easily controlled through the frequency of gas pulse feeding in the Si nanocluster formation.