Abstract
The digital gas-feeding method was used in this study, with Si 2H 6 as the source gas, in a low-pressure chemical-vapor deposition system, to grow Si nanoclusters with high densities and uniform sizes. The densities of the Si nanoclusters rose to 7 × 10 11 cm −2, and their sizes slightly changed at about 7 nm based on the frequency of gas-pulse feeding in the digital process. MOSFETs containing Si nanoclusters as a floating gate in the gate stack were fabricated, and the various nonvolatile-memory characteristics of MOSFET were investigated. The total threshold voltage shift of 3.7 V was achieved, and the program/erase times were found to be 5 μs/50 ms when the program/erase voltages were +18/−20 V, respectively. The charge-storage memory window was extrapolated over 1 year to be 1.5 V in the retention measurements of the fabricated Si nanocluster floating-gate memory device.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
