Abstract
The fabrication procedure of ferroelectric thin film capacitors onto conventional Si LSIs is investigated. Electrical characteristics of the integrated Ba1-x Srx TiO3 (BST) capacitors and the metal-oxide-semiconductor transistors embedded in the Si substrate are examined. Results of these measurements suggest the usefulness of this integration process for the fabrication of ferroelectric thin film devices, which is substantiated by the evaluation of an analog/digital IC with the integrated BST bypass capacitor.
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