Abstract
Si/Ge x Si 1− x heterojunction n-p-n bipolar transistors (HBT) with a double polycrystalline silicon (polysilicon) self-aligned structure were fabricated by using high dose Ge implantation for the formation of the Si/Ge x Si 1− x heterostructure and As and BF 2 implantation for emitter and base doping. Improvements in electrical characteristics compared to reference Si transistors are demonstrated and related to a band gap narrowing in the base region and to a reduction of B diffusion.
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