Characterization of [formula omitted] heterojunction bipolar transistors formed by Ge ion implantation in Si

Abstract

Epitaxial Si Ge x Si 1 − x heterojunctions were formed by high dose Ge ion implantation in Si followed by rapid thermal annealing at 1000°C for 10 s. This technique was adopted to fabricate Si Ge x Si 1 − x heterojunction n-p-n bipolar transistors (HBT) using a self-aligned, double polycrystalline silicon process commonly used for fast Si bipolar transistors. The devices are characterized by a 60 nm wide neutral base with a Ge concentration peak of ≈ 7 at.% at the base-collector junction. Good static and dynamic electrical characteristics are demonstrated and discussed.