Abstract
High quality SiGe strained layer superlattices can be achieved by low temperature molecular beam epitaxy. Strain distribution and Brillouin zone folding effects have a large influence on the band structure. Photoluminescence from strain-symmetrized Si 6Ge 4 superlattices shows the first evidence for the achievement of a quasi-direct fundamental energy gap. Raman spectroscopy is used as a versatile tool to characterize short-period SiGe superlattices.
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