Abstract
The liquid Si-compound ditertiarybutyl silane (DTBSi) has been investigated as a doping source for the metal organic vapour-phase epitaxy (MOVPE) of InP and GaAs using TBP or DTBP and TBAs as less hazardous group-V-sources. For both material systems the measured carrier concentration is directly proportional to the DTBSi/group-III-partial pressure ratio with a slope of unity. Uncompensated n-type InP as well as GaAs layers are achieved up to the 10 18 cm −3 doping range. Additional calibrated SIMS-studies of InP layers show a coincidence of the Si-concentration in the InP layers with the measured net n-type carrier concentration within the experimental errors. With a reduction of the growth temperature from 610°C to 570°C a significant reduction of the Si-doping efficiency is observed. However, for temperature in excess of 610°C up to 700°C an almost constant doping efficiency for GaAs is obtained. For GaAs a slight reduction in Si-incorporation efficiency with increasing V/III-ratio is detected. The successful doping characteristics for GaAs have been applied to realize n-GaAs : Si Hall sensor device structures. The lateral homogeneity of the sheet resistance is evaluated as a function of the V/III-ratio and the substrate material. Under optimum conditions the normalized variance of the sheet resistance can be as low as 1%.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
