Abstract
Molecular beam epitaxy of GaAs doped with Si on a vicinal surface of (111)A, (211)A and (311)A have been examined. The variations of the impurity concentrations are dependent on the growth conditions and are affected by the angle of the substrates. The impurity concentrations are compared with a model calculation which is based on microscopic surface structures and kinematical surface reactions. Growth modes are monitored by reflection high-energy electron diffraction intensity oscillations. A doping mechanism of Si atoms into GaAs films is proposed.
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