Abstract
We have made a study of reflection high-energy electron diffraction intensity oscillations during the growth of GaAs on singular GaAs (111)A substrates by molecular beam epitaxy. The behavior is quite different from growth of GaAs on (001) orientated substrates in that the oscillation period is growth temperature and As4:Ga flux ratio dependent. We speculate that this is due to the (110)-like configuration of the (111)A 2×2 reconstructed surface, which requires direct interaction of a Ga and an As atom for growth to occur.
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