Abstract
Microcrystalline diamond films doped with silicon have been grown on aluminum nitride substrates by a microwave plasma CVD. The doping has been performed via adding silane in various concentrations to CH4–H2 reaction gas mixture in course of the deposition process. The films produced at the substrate temperatures of 750 to 950°C have been characterized by SEM, AFM, Raman and photoluminescence (PL) spectroscopy to assess the effect of Si doping on the diamond structure. The doped films showed bright photoluminescence of silicon-vacancy (SiV) color centers at 738 nm wavelength as well as noticeable side band at 723 nm. The optimum doping condition (SiH4/CH4 = 0.6%), that maximize the SiV PL emission, was determined for the range of silane concentrations SiH4/CH4 (0.0 – 0.9%) explored. A further PL enhancement can be achieved by increase in the substrate temperature. The applied in situ doping from gas phase is shown to be an easy and effective method to incorporate Si in diamond in a controllable way.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
