Abstract
Microcrystalline diamond films doped with silicon have been grown on aluminum nitride substrates by a microwave plasma CVD. The doping has been performed via adding silane in various concentrations to CH4-H2 reaction gas mixture in course of the deposition process. The films produced at the substrate temperatures of 750 to 950°C have been characterized by SEM, AFM, Raman and photoluminescence (PL) spectroscopy to assess the effect of Si doping on the diamond structure. The doped films showed bright photoluminescence of silicon-vacancy (SiV) color centers at 738 nm wavelength as well as noticeable side band at 723 nm. The optimum doping condition (SiH4/CH4 = 0.6%), that maximize the SiV PL emission, was determined for the range of silane concentrations SiH4/CH4 (0.0 - 0.9%) explored. A further PL enhancement can be achieved by increase in the substrate temperature. The applied in situ doping from gas phase is shown to be an easy and effective method to incorporate Si in diamond in a controllable way.
Highlights
Chemical vapor deposition (CVD) diamond films are of high research and industrial interests due to extreme hardness and thermal conductivity, low wear, wide transparency window, biocompatibility, and a bouquet of other unique properties, making this material important in tool manufacturing, IR and RF optics, biomedicine [1,2,3,4,5]
Raman spectroscopy and photoluminescence spectra were taken at room temperature (R.T.) with LABRAM HR-800 spectrometer equipped with a diode-pumped solid-state laser ( = 473 nm)
In general the undoped film and the films doped with Si at different silane addition in gas at fixed deposition temperature Td=800oC exhibited similar morphologies, but different grain
Summary
Chemical vapor deposition (CVD) diamond films are of high research and industrial interests due to extreme hardness and thermal conductivity, low wear, wide transparency window, biocompatibility, and a bouquet of other unique properties, making this material important in tool manufacturing, IR and RF optics, biomedicine [1,2,3,4,5]. The doping of the films with nitrogen and silicon to form bright color centers, such as nitrogen vacancy (NV) or siliconvacancy (SiV) in diamond is demanded for applications in quantum information technologies [6, 7] and optical biomarkers [8, 9]. The Si-doped diamond films display excellent tribological properties due to reduced friction. We present new results on microcrystalline diamond coatings produced in various regimes on the AlN substrates using monosilane gas for the doping
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