Si-doped (AlGa)2O3 growth on a-, m- and r-plane α-Al2O3 substrates by molecular beam epitaxy

Abstract

Abstract We reported the growth of (AlGa)2O3 layers on (11-20), (10-10), and (10-12) α-Al2O3 substrates using molecular beam epitaxy, and the electrical characterization of Si-doped (AlGa)2O3 layers. The Ga2O3 layers grown on (10-10) and (10-12) α-Al2O3 were α-phase single crystals, while the Ga2O3 layer grown on (11-20) α-Al2O3 consisted of (11-20) α-Ga2O3 and (-201) β-Ga2O3. The Al composition of the (11-20) and (10-10) (AlGa)2O3 layers was controlled by varying the Al flux. The Si-doped (10-10) α-(Al x Ga1-x )2O3 layers with x = 0-0.41 were electrically conducting.